- 您现在的位置：买卖IC网 > Sheet目录443 > IRF530STRLPBF (Vishay Siliconix)MOSFET N-CH 100V 14A D2PAK
IRF530S, SiHF530S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS T J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 80 V, V GS = 0 V, T J = 150 °C
100
-
2.0
-
-
-
-
0.12
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 8.4 A b
-
-
0.16
?
Forward Transconductance
g fs
V DS = 50 V, I D = 8.4
A b
5.1
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
670
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
250
60
-
-
-
26
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 14 A, V DS = 80 V,
see fig. 6 and 13 b
-
-
5.5
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
10
11
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, I D = 14 A,
R g = 12 ? , R D = 3.6 ? , see fig. 10 b
-
-
-
34
23
24
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
package and center of
G
D
-
4.5
-
nH
Internal Source Inductance
L S
die contact
-
7.5
-
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
14
56
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 14 A, V GS = 0 V b
T J = 25 °C, I F = 14 A, dI/dt = 100 A/μs b
-
-
-
-
150
0.85
2.5
280
1.7
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 91020
S11-1046-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRF540NL
MOSFET N-CH 100V 33A TO-262
IRF540STRR
MOSFET N-CH 100V 28A D2PAK
IRF5800TRPBF
MOSFET P-CH 30V 4A 6-TSOP
IRF5804TRPBF
MOSFET P-CH 40V 2.5A 6-TSOP
IRF6100PBF
MOSFET P-CH 20V 5.1A FLIPFET
IRF6100
MOSFET P-CH 20V 5.1A FLIP-FET
IRF6215L
MOSFET P-CH 150V 13A TO-262
IRF634B_FP001
MOSFET N-CH 250V 8.1A TO-220
相关代理商/技术参数
IRF530STRR
功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530STRRPBF
功能描述:MOSFET N-Chan 100V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF531
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola 功能描述:IRF531 MOTOROLA S9G3A 制造商:Harris Corporation 功能描述:
IRF531FI
制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
IRF531R
制造商:HARRIS 制造商全称:HARRIS 功能描述:N-Channel Power MOSFETs Avalanche Energy Rated
IRF532
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF532FI
制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
IRF532R
制造商:HARRIS 制造商全称:HARRIS 功能描述:N-Channel Power MOSFETs Avalanche Energy Rated